philips semiconductors product specification thyristors bt151 series c general description quick reference data passivated thyristors in a plastic symbol parameter max. max. max. unit envelope, intended for use in applications requiring high bt151- 500c 650c 800c bidirectional blocking voltage v drm , repetitive peak off-state 500 650 800 v capability and high thermal cycling v rrm voltages performance. typical applications i t(av) average on-state current 7.5 7.5 7.5 a include motor control, industrial i t(rms) rms on-state current 12 12 12 a and domestic lighting, heating and i tsm non-repetitive peak on-state 100 100 100 a static switching. current pinning - to220ab pin configuration symbol pin description 1 cathode 2 anode 3 gate tab anode limiting values limiting values in accordance with the absolute maximum system (iec 60134). symbo parameter conditions min. max. unit l -500c -650c -800c v drm , repetitive peak - 500 1 650 1 800 v v rrm off-state voltages i t(av) average on-state half sine wave; t mb 109 ?c - 7.5 a current i t(rms) rms on-state current all conduction angles - 12 a i tsm non-repetitive peak half sine wave; t j = 25 ?c on-state current prior to surge t = 10 ms - 100 a t = 8.3 ms - 110 a i 2 ti 2 t for fusing t = 10 ms - 50 a 2 s di t /dt repetitive rate of rise of i tm = 20 a; i g = 50 ma; - 50 a/ s on-state current after di g /dt = 50 ma/ s triggering i gm peak gate current - 2 a v gm peak gate voltage - 5 v v rgm peak reverse gate - 5 v voltage p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature ak g 123 tab 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the thyristor may switch to the on-state. the rate of rise of current should not exceed 15 a/ s. april 2004 1 rev 1.000
philips semiconductors product specification thyristors bt151 series c thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance - - 1.3 k/w junction to mounting base r th j-a thermal resistance in free air - 60 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a - 2 15 ma i l latching current v d = 12 v; i gt = 0.1 a - 10 40 ma i h holding current v d = 12 v; i gt = 0.1 a - 7 20 ma v t on-state voltage i t = 23 a - 1.44 1.75 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.6 1.5 v v d = v drm(max) ; i t = 0.1 a; t j = 125 ?c 0.25 0.4 - v i d , i r off-state leakage current v d = v drm(max) ; v r = v rrm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; off-state voltage exponential waveform; gate open circuit 50 130 - v/ s r gk = 100 ? 200 1000 - v/ s t gt gate controlled turn-on i tm = 40 a; v d = v drm(max) ; i g = 0.1 a; - 2 - s time di g /dt = 5 a/ s t q circuit commutated v d = 67% v drm(max) ; t j = 125 ?c; - 70 - s turn-off time i tm = 20 a; v r = 25 v; di tm /dt = 30 a/ s; dv d /dt = 50 v/ s; r gk = 100 ? april 2004 2 rev 1.000
philips semiconductors product specification thyristors bt151 series c fig.1. maximum on-state dissipation, p tot , versus average on-state current, i t(av) , where a = form factor = i t(rms) / i t(av) . fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 10ms. fig.3. maximum permissible rms current i t(rms) , versus mounting base temperature t mb . fig.4. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t mb 109?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 012345678 0 5 10 15 a = 1.57 1.9 2.2 2.8 4 it(av) / a ptot / w tmb(max) / c 125 118.5 112 105.5 conduction angle form factor degrees 30 60 90 120 180 4 2.8 2.2 1.9 1.57 a 1 10 100 1000 0 20 40 60 80 100 120 number of half cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t 10 100 1000 10us 100us 1ms 10ms t / s itsm / a t i tsm time i tj initial = 25 c max t di /dt limit t 0.01 0.1 1 10 0 5 10 15 20 25 surge duration / s it(rms) / a -50 0 50 100 150 0 5 10 15 bt151 tmb / c it(rms) / a 109 c -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 tj / c vgt(tj) vgt(25 c) april 2004 3 rev 1.000
philips semiconductors product specification thyristors bt151 series c fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-mb , versus pulse width t p . fig.12. typical, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j . -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c igt(tj) igt(25 c) 0 0.5 1 1.5 2 0 10 20 30 v t (v) i t typ max (a) v o = 1.06 v r s = 0.0304 ohms t j = 125 c t j = 25 c -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt145 tj / c il(tj) il(25 c) 0.001 0.01 0.1 1 10 tp / s zth j-mb (k/w) 10us 0.1ms 1ms 10ms 0.1s 1s 10s t p p t d -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c ih(tj) ih(25 c) 0 50 100 150 10 100 1000 10000 tj / c dvd/dt (v/us) gate open circuit rgk = 100 ohms april 2004 4 rev 1.000
philips semiconductors product specification thyristors bt151 series c mechanical data dimensions in mm net mass: 2 g fig.13. sot78 (to220ab). pin 2 connected to mounting base. notes 1. refer to mounting instructions for sot78 (to220) envelopes. 2. epoxy meets ul94 v0 at 1/8". 10,3 max 3,7 2,8 3,0 3,0 max not tinned 1,3 max (2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min april 2004 5 rev 1.000
philips semiconductors product specification thyristors bt151 series c definitions data sheet status data sheet product definitions status 2 status 3 objective data development this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the specification in any manner without notice preliminary data qualification this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product product data production this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change notification (cpcn) procedure snw-sq-650a limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. ? philips electronics n.v. 2004 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. 2 please consult the most recently issued datasheet before initiating or completing a design. 3 the product status of the device(s) described in this datasheet may have changed since this datasheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. april 2004 6 rev 1.000
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